Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T09:47:26.015Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of strain within Si1-yCy layers grown by CVD on a Si Substrate

Published online by Cambridge University Press:  01 February 2011

Nikolay Cherkashin ,
A. Gouye ,
F. Hue ,
F. Houdellier ,
M. J. Hytch ,
E. Snoeck ,
V. Paillard ,
O. Kermarrec ,
D. Rouchon  and
M. Burdin
...Show all authors
Nikolay Cherkashin
Affiliation:
nikolay@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France, +33 5 62 25 79 60
A. Gouye
Affiliation:
adrien.gouye@cea.fr, STMicroelectronics, 850 rue Jean Monnet, Crolles, 38926, France
F. Hue
Affiliation:
fhue@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
F. Houdellier
Affiliation:
florent@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
M. J. Hytch
Affiliation:
hytch@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
E. Snoeck
Affiliation:
snoeck@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
V. Paillard
Affiliation:
vincent.paillard@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
O. Kermarrec
Affiliation:
kermarrec@cea.fr, STMicroelectronics, 850 rue Jean Monnet, Crolles, 38926, France
D. Rouchon
Affiliation:
rouchon@cea.fr, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, 38054, France
M. Burdin
Affiliation:
burdin@cea.fr, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, 38054, France
P. Holliger
Affiliation:
holliger@cea.fr, CEA-LETI, Minatec, 17 rue des Martyrs, Grenoble, 38054, France
A. Claverie
Affiliation:
claverie@cemes.fr, CEMES, CNRS, 29 rue Jeanne Marvig, Toulouse, 31055, France
Get access

Abstract

In this work, we performed quantitative measurements of strain in structures consisting of a 30 nm-thick Si1-yCy layer grown by chemical vapour deposition (CVD) on a Si (001) substrate at 550 or 600°C. The total C concentration varies from 0.67 to 1.97% that was measured by SIMS. Geometric phase analysis (GPA) of high resolution transmission electron microscopy (HR TEM) cross-section images and convergent beam electron diffraction (CBED) were used to deduce the strain within these Si1-yCy layers. Finite-element simulations were carried out to estimate the impact of strain relaxation in thin areas of a specimen. These results were compared with the data obtained by high resolution X-ray diffraction and Raman spectroscopy and with the predictions of elasticity theory. Particular interest is paid to the formation of the structural defects within Si1-yCy layers as a function of a C concentration, growth temperature and incorporated strain. Both cross-sectional and plan-view TEM specimen configurations were used to obtain quantitative information on the defect size distribution, their density and structure.

Keywords

stress/strain relationshiptransmission electron microscopy (TEM)chemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1026: Symposium C – Quantitative Electron Microscopy for Materials Science , 2007 , 1026-C07-03
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.A and Newman, R. C., J. Phys. Chem. Solids 26, 373 (1965).10.1016/0022-3697(65)90166-6Google Scholar
2. Iyer, S. S., Eberl, K., Goorsky, M. S., Legoues, F. K., Cardone, F., and Ek, B. A., in Silicon Molecular Beam Epitaxy, edited by Bean, J. C., Iyer, S., and Wang, K., MRS Symposia Proceedings No. 220, 581 (Materials Research Society, Pittsburgh, 1991).Google Scholar
3. Tersoff, J., Phys. Rev. Lett. 74, 5080 (1995).10.1103/PhysRevLett.74.5080Google Scholar
4. Simon, L., Kubler, L., Groenen, J., and Balladore, J. L., Phys. Rev. B 56, 15, 9947 (1997).10.1103/PhysRevB.56.9947Google Scholar
5. Claverie, A., Fauré, J., Balladore, J. L., Simon, L., Mesli, A., Diani, M., Kubler, L., and Aubel, D., J. Cryst. Growth 157, 420 (1995).10.1016/0022-0248(95)00335-5Google Scholar
6. Simon, L., Kubler, L., Bischoff, J. L., Bolmont, D., Fauré, J., Claverie, A., Balladore, J. L., Phys. Rev. B 54, 15, 10559 (1996).10.1103/PhysRevB.54.10559Google Scholar
7. Hytch, M.J., Snoeck, E., Kilaas, R., Ultramicroscopy 74, 131–146 (1998).10.1016/S0304-3991(98)00035-7Google Scholar
8. Snoeck, E., Warot, B., Ardhuin, H., Rocher, A., Casanove, M. J., Kilaas, R., Hytch, M. J., Thin Solid Films 319, 157–162 (1998).10.1016/S0040-6090(97)01113-9Google Scholar
9.HREM Research, http://www.hremresearch.com.Google Scholar
11. Cherkashin, N., Hÿtch, M.J., Snoeck, E., Hüe, F., Hartmann, J.M., Bogumilowicz, Y. and Claverie, A., NIMB B 253 (1-2): 145–148, 2006.10.1016/j.nimb.2006.10.051Google Scholar
12. Houdellier, F., Roucau, C., Cléent, L., Rouviére, J.L., Casanove, M.J., Ultramicroscopy 106, 951–959 (2006).10.1016/j.ultramic.2006.04.011Google Scholar
13. Rücker, H., Methfessel, M., Phys. Rev B 52, 15, 11059 (1995).10.1103/PhysRevB.52.11059Google Scholar