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Determination of Ga Self-Diffusion Coefficient in GaAs

Published online by Cambridge University Press:  26 February 2011

T. Y. Tan ,
S. Yu  and
U. Gösele
T. Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
S. Yu
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
U. Gösele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27706
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Abstract

A quantitative determination of the contributions of the triply-negatively charged Ga vacancies and of the doubly-positively charged Ga self-interstitials to Ga self-diffusion coefficient in GaAs has been carried out. Unde thermal equilibrium and intrinsic conditions, the contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 739
Copyright
Copyright © Materials Research Society 1992

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References

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