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Determination of Electrically Active Defect Profiles in Semiconductors Using a Photoelectrochemical Technique

Published online by Cambridge University Press:  26 February 2011

F.D. Gealy  and
H.L. Tuller
F.D. Gealy
Affiliation:
Crystal Physics and Optical Electronic Laboratory, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
H.L. Tuller
Affiliation:
Crystal Physics and Optical Electronic Laboratory, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Electrically active defects are common in semiconductors. Such defects include easily ionized substitutional impurities, vacancies, and interstitials which can act as shallow donors or acceptors. If one type of defect predominates, its concentration corresponds directly to the local donor or acceptor concentration. Consequently, measurement of a carrier profile in a nonhomogeneous semiconductor is effectively the same as measurement of the defect profile.

The photoelectrochemical profiling technique allows for carrier profile measurement with submicrometer spatial resolution. The sample is profiled by photoetching, then carrier measurement, and iterating this procedure until the desired profile depth is obtained.

Derivation of the space charge capacitance by impedance spectroscopy is discussed. An analysis of the P-doped Si-liquid electrolyte interface is presented. Phosphorous diffusivity coefficients in good agreement with literature values are derived from photoelectrochemical derived profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 151
Copyright
Copyright © Materials Research Society 1987

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References

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