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Determination of BPSG Thin-Film Properties using IR Reflection Spectroscopy of Product Wafers

  • Thomas M. Niemczyk (a1) (a2) (a3), James E. Franke (a1) (a2) (a3), Lizhong Zhang (a1) (a2) (a3), David M. Haaland (a1) (a2) (a3) and Kenneth J. Radigan (a1) (a2) (a3)...

Abstract

Three BPSG calibration sets were analyzed using infrared external reflection-absorption spectroscopy: 1) 21 films deposited on undoped silicon coated with 0.1 pm of silicon dioxide, 2) 21 films deposited on undoped silicon, and 3) 9 films deposited on microelectronics product wafers. A multivariate partial least squares analysis of the spectral data for the first large data set showed that boron content, phosphorus content, and film thickness can be quantified with precisions of 0.10 wt%, 0.12 wt%, and 30 Å, respectively. The second large data set yielded similar results. The precisions obtained for the nine product wafer samples were 0.13 wt% B, 0.09 wt% P, and for film thickness 103 Å.

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1. Kern, W., Kurylo, W.A., and Tino, C.J., RCA Review, 46, 117152 (1985).
2. Franke, J.E., Niemczyk, T.M., and Haaland, D.M., Spectrochimica Acta, in press.
3. Franke, J.E., Zhang, L., Niemczyk, T.M., Haaland, D.M., and Linn, J.H., J. Electrochem. Soc., 140(5), 1425 (1993).
4. Haaland, D.M., Anal. Chem., 60, 1208 (1988).
5. Haaland, D.M. and Thomas, E.V., Anal. Chem., 60, 1193 (1988).

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