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Determination of AlGaN/GaN HFET Electric Fields using Electroreflectance

Published online by Cambridge University Press:  11 February 2011

S. R. Kurtz ,
A. A. Allerman ,
D. D. Koleske ,
A. G. Baca  and
R. D. Briggs
S. R. Kurtz
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0601, U.S.A.
A. A. Allerman
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0601, U.S.A.
D. D. Koleske
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0601, U.S.A.
A. G. Baca
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0601, U.S.A.
R. D. Briggs
Affiliation:
Sandia National Laboratories Albuquerque, NM 87185–0601, U.S.A.
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Abstract

A contacted electroreflectance technique was used to characterize the electronic properties of AlGaN/GaN heterostructure field-effect transistors (HFETs). By studying variations in the electroreflectance with applied electric field, spectral features associated with the AlGaN barrier, the 2-dimensional electron gas at the interface, and bulk GaN were observed. Barrier-layer composition and electric field were determined from the AlGaN Franz-Keldysh oscillations. Comparing HFETs grown on SiC and sapphire substrates, the measured AlGaN polarization electric field (0.25±0.05 MV/cm) approached that predicted by a standard model (0.33 MV/cm) for the higher mobility HFET grown on SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L10.4
Copyright
Copyright © Materials Research Society 2003

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References

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