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Detection of Surface Response to Chemical/Mechanical Planarization of Silica Films

Published online by Cambridge University Press:  25 February 2011

Jeffrey A. Trogolo  and
Krishna Rajan
Jeffrey A. Trogolo
Affiliation:
Rensselaer Polytechnic Institute, Department of Materials Engineering, Troy, NY 12180
Krishna Rajan
Affiliation:
Rensselaer Polytechnic Institute, Department of Materials Engineering, Troy, NY 12180
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Abstract

Chemical/mechanical (C/M) planarization is a technique that has received attention lately due to the industry-wide trend toward multilevel device processing. In most multilevel schemes, the most commonly planarized layer is the interlevel dielectric, usually an oxide. In order to understand the response of this oxide layer to the planarization process, the authors have addressed the issues of chemical and structural effects of C/M planarization on silicon dioxide films. Transmission electron microscopy (TEM) and Fourier transformed infrared (FTIR) spectroscopy were used to examine the films and revealed that there are chemical and structural changes that occur within 200 nm of the film surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 869
Copyright
Copyright © Materials Research Society 1992

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References

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