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Detection of Charged Particles in Thick Hydrogenated Amorphous Silicon Layers

Published online by Cambridge University Press:  26 February 2011

I. Fujieda ,
G. Cho ,
S. N. Kaplan ,
V. Perez-Mendez ,
S. Qureshi ,
W. Ward  and
R. A. Street
I. Fujieda
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. N. Kaplan
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
S. Qureshi
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
W. Ward
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304.
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Abstract

We show our results in detecting particles of various linear energy transfer, including minimum ionizing electrons from a Sr-90 source with 5–12 micron thick n-i-p and p-i-n diodes. We measured W (average energy to produce one electron-hole pair) using 17keV filtered Xray pulses with a result W=6.0+0.2eV. This is consistent with the expected value for a semiconductor with band gap of 1.7–1.9eV. With heavily ionizing particles such as 6 MeV alphas and 1–2 MeV protons, there was some loss of signal due to recombination in the particle track. The minimum ionizing electrons showed no sign of recombination. Applications to pixel and strip detectors for physics experiments and medical imaging will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 469
Copyright
Copyright © Materials Research Society 1988

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References

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