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A Detailed Study of a Novel Wafer Separation Method for Surface Sensitive MEMS Wafers

Published online by Cambridge University Press:  12 January 2012

K. Malachowski
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium
S. Severi
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium
R. Van Hoof
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium
S. Sangameswaran
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium
S. Genda
Affiliation:
Disco Hi-Tec Europe GmbH, Liebigstrasse 8, 85551 Kirchheim, Germany
T. Tabuchi
Affiliation:
Disco Hi-Tec Europe GmbH, Liebigstrasse 8, 85551 Kirchheim, Germany
N. Uchiyama
Affiliation:
Hamamatsu Photonics K.K., 314-5 Shimokanzo Iwata-City, Japan
A. Witvrouw
Affiliation:
Imec, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

Abrasive blade dicing is the most common technique for die separation. In this work an alternative dry and non-abrasive die separation method, which is known as "Stealth dicing", is assessed for surface-sensitive MEMS (Micro Electro Mechanical Systems) wafers. The dicing performance and capability of the system is investigated on 200mm full thickness wafers with and without MEMS structures. The diced wafers are analyzed with respect to the silicon cutting quality, possible particle contamination, the condition of functional structures and their mechanical and electrical functionality. In addition the performance and limitations of two different Stealth Dicing Engine (SDE) types, SDE01 and SDE03, are compared to each other with respect to their performance on MEMS wafer dicing.

From this work design rules and proper dimensions of the scribe line can be determined. Process integration solutions, describing steps before and after the Stealth dicing process, including the contact-less dicing tape application to the wafer back side and the final die separation method by tape stretching, are presented. It was also found that the SDE03 laser with its outstanding performance in terms of process speed and separation quality can bring a breakthrough for applying this technology for MEMS wafers.

Type
Research Article
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Witvrouw, A., Tilmans, H.A.C., Bogaerts, L., De Moor, P., Bearda, T., Halder, S., Haspeslagh, L., Schlatmann, B., Van Bommel, M., De Nooijer, C., Lauria, J., Vanneer, R., and Van Drieenhuizen, B., ‘Packaging of 11Mpixel CMOS-integrated SiGe Micro-Mirror Arrays’, Proc. IEEE MEMS 2009, p 136–139 (2009).Google Scholar
2. Witvrouw, A., Haspeslagh, L., Varela Pedreira, O., De Coster, J., De Wolf, I., Tilmans, H. A.C., Bearda, T., Schlatmann, B., van Bommel, M., de Nooijer, C., Magnée, P.H.C., Lous, E.J., Hagting, M., Lauria, J., Vanneer, R., and van Drieenhuizen, B., ‘11MPixel CMOS-Integrated SiGe Micro-Mirror Arrays for High-end Applications’, JMEMS Vol. 19, No. 1, 201–215 (2010).Google Scholar
3. Fukuyo, F., Fukumitsu, K., and Uchiyama, N., ‘Stealth Dicing Technology and Applications’, Proc. of the 6th International Symposium on Laser Precision Microfabrication (LPM2005). Google Scholar
4. Witvrouw, A., Van Hoof, R., Bryce, G., Du Bois, B., Verbist, A., Severi, S., Haspeslagh, L., Osman, H., De Coster, J., Wen, L., Puers, R., Beernaert, R., De Smet, H., Rudra, S., and Van Thourhout, D., ‘SiGe MEMS technology: a Platform Technology Enabling Different Demonstrators’, “ECS Transactions - Las Vegas, NV”, Vol 33, No. 6, “SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices”, pp. 799–812 (2010).Google Scholar
5. Johansmann, M., Siegmund, G., and Pineda, M., “Targeting the limits of laser Doppler vibrometry,” Proc. Conf. IDEMA, Japan, 12pp, 2005.Google Scholar
6. Sangameswaran, S., De Coster, J., Cherman, V., Czarnecki, P., Linten, D., Scholz, M., Thijs, S., Groeseneken, G. and De Wolf, I., “Behavior of RF MEMS switches under ESD stress”, Proceedings EOS/ESD Symposium, EOS-32, Reno, NV, USA, October 3-8, pp. 443–44, 2010.Google Scholar