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Desorption Kinetics of Indium at the InAs/GaAs(001) Heterointerface

Published online by Cambridge University Press:  25 February 2011

Ron Kaspi  and
Keith R. Evans
Ron Kaspi
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELR), Wright-Patterson Air Force Base, Ohio 45433
Keith R. Evans
Affiliation:
Wright Laboratory, Solid State Electronics Directorate (WL/ELR), Wright-Patterson Air Force Base, Ohio 45433
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Abstract

Desorption Mass Spectrometry (DMS) is used to monitor In desorption kinetics at the InAs/GaAs (001) heterointerface. In incorporation is determined to be significantly affected by temperature, surface reconstruction, and the V/III flux ratio. It is shown that the onset of the As-stabilized (2×4)-to-In-stabilized (4×2) surface phase transition is surface stoichiometry dependent, and that both the As-stabilized and the In-stabilized surface exhibit first order desorption behavior. Desorption activation energy of In from the (2×4) and the (4×2) surface is measured. In addition to an In-stabilized regime, an In-accumulated regime is identified by its deviation from first order desorption behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 73
Copyright
Copyright © Materials Research Society 1993

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References

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