Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-27T00:45:43.028Z Has data issue: false hasContentIssue false

DESIGN OPTIMIZATION OF A FERROELECTRIC NANO-ACTUATOR USING PHASE-FIELD MODELING

Published online by Cambridge University Press:  09 June 2014

Ananya Renuka Balakrishna
Affiliation:
Department of Engineering Science, Parks Road, University of Oxford, OX1 3PJ, U.K.
John E. Huber
Affiliation:
Department of Engineering Science, Parks Road, University of Oxford, OX1 3PJ, U.K.
Get access

Abstract

A ferroelectric crystal with charge-free surface conditions contains polarized domains which can form a flux closure with zero net polarization. In the presence of an external electric field, the flux closure in a two-dimensional continuum reorients its spontaneous polarization to align with the field. Based on this concept of ferroelectric switching coupled with mechanical straining, we demonstrate the working principle of a ferroelectric nano-actuator. The behavior of the actuator is explored under the action of electro-mechanical loading and its mechanism is simulated with a 2D phase-field model. The design of nano-actuator is modified to achieve greater actuation displacements by bending a thin device.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Niezrecki, C., Brei, D., Balakrishnan, S., and Moskalik, A., Shock Vib. Dig., 33, 269280, (2001).CrossRefGoogle Scholar
Pozzi, M. and King, T., Engg. Sci. Education Journal, 3136, (2001).CrossRefGoogle Scholar
Chee, C. Y. K., Tong, L., and Steven, G. P., J. Intell. Mater. Syst. Struct., 9, 319, (1998).CrossRefGoogle Scholar
Haertling, G. H., Ferroelectrics, 154, 101106, (1994).CrossRefGoogle Scholar
Muralt, P., J. Micromechanics Microengineering, 10, 136146, (2000).CrossRefGoogle Scholar
Landis, C. M., Curr. Opin. Solid State Mater. Sci., 8, 5969, (2004).10.1016/j.cossms.2004.03.010CrossRefGoogle Scholar
Huber, J. E., Curr. Opin. Solid State Mater. Sci., 9, 100106, (2005).CrossRefGoogle Scholar
Burcsu, E., Ravichandran, G., and Bhattacharya, K., J. Mech. Phys. Solids, 52, 823846, (2004).10.1016/j.jmps.2003.08.001CrossRefGoogle Scholar
Burcsu, E., Ravichandran, G., and Bhattacharya, K., Appl. Phys. Lett., 77, 1698, (2000).CrossRefGoogle Scholar
Volland, B. E., Heerlein, H., and Rangelow, I. W., Microelectron. Eng., 6162, 10151023, (2002).CrossRefGoogle Scholar
Mu, X. J., Zhou, G., Yu, H. B., Du, Y., Feng, H. H., Tsai, J. M. L., and Chau, F. S., in Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) , Paris, France, 2012, pp. 902905.Google Scholar
Su, Y. and Landis, C. M., J. Mech. Phys. Solids, 55, 280305, (2007).CrossRefGoogle Scholar
Kontsos, A. and Landis, C. M., J. Appl. Mech., 77, 041014, (2010).CrossRefGoogle Scholar
Münch, I. and Huber, J. E., Appl. Phys. Lett., 95, 022913, (2009).CrossRefGoogle Scholar