Hostname: page-component-7bb8b95d7b-nptnm Total loading time: 0 Render date: 2024-09-12T13:36:51.550Z Has data issue: false hasContentIssue false
  • English
  • Français

Design and Fabrication of Graded Bandgap Solar Cells in Amorphous Si and Alloys

Published online by Cambridge University Press:  01 January 1993

Vikram L. Dalal  and
Greg Baldwin
Vikram L. Dalal
Affiliation:
Iowa State University , Dept. of Electrical and Computer Engr. Ames,Iowa 50011
Greg Baldwin
Affiliation:
Iowa State University , Dept. of Electrical and Computer Engr. Ames,Iowa 50011
Get access

Abstract

In this paper, we discuss the appropriate design conditions and fabrication technology for graded bandgap solar cells in a-Si:H and a-(Si,Ge):H. In particular, we show that by carefully designing the buffer layers and the placement of the graded gap in the i layer of a p-i-n cell, one can fabricate a-Si:H solar cells which are more stable than standard design solar cells. Similarly, appropriate considerations of device physics and electric field profiles in devices made from a-(Si,Ge):H alloys can result in high performance a-(Si,Ge):H cells . We also show that using significant H dilution during growth of a-(Si,Ge):H layers and cells results in both films and devices of high quality and reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 833
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hack, M. and Shur, M., J. Appl. Phys., 58, 997 and 1656 (1985)Google Scholar
2. Dalai, V. L., Moradi, B. and Baldwin, G., Proc. AIP Conf. Vol.234, 234 (1991)Google Scholar
3. Johnson, N. M., Appl. Phys. Lett. 59, 1443 (1991)Google Scholar
4. Dalai, V. L., Knox, R., Kandalaft, N., Baldwin, G., Proc. of 22nd. IEEE Photovolt. Spec. Conf. (1991) p. 1399 Google Scholar
5. Dalai, V. L. and Baldwin, G., Proc. of 21st. IEEE Photovolt. Spec. Conf., (1991) p. 1363 Google Scholar
6. Arya, R. and Catalano, A., Appl. Phys. Lett. Google Scholar
7. Dalai, V. L., Leonard, M. and Booker, J., Proc. of 18th. IEEE Photovolt. Spec. Conf., (1985) p. 837 Google Scholar
8. Guha, S., Yang, J., Pawliekewicz, A., Glatfelter, T., Ross, R. and Ovshinsky, S., Appl. Phys. Lett., 54, 2330 (1989)Google Scholar
9. Dalai, V. L., Proc. of 18th. IEEE Photovolt. Spec. Conf., (1985) p.523 Google Scholar