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Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

  • Ashok K Sood (a1), Rajwinder Singh (a2), Yash R Puri (a3), Frederick W Clarke (a4), Amir Dabiran (a5), Peter Chow (a6), Jie Deng (a7) and James C.M. Hwang (a8)...

Abstract

GaN /AlGaN transistors are being developed for a variety of RF electronic and high temperature electronics applications that will replace GaAs and Silicon based devices and amplifiers for commercial and military applications. In this paper, we present GaN/AlGaN based HEMT device architectures on SiC substrates with simulation and modeling results. The HEMT epitaxial layers were grown using RF Plasma Assisted MBE Technique. This approach has demonstrated very uniform epitaxial layers. The key to high performance HEMTs is the ability to grow high quality (Al)GaN buffer layers. Details of the electrical and optical characteristics of the HEMT wafers are presented. In addition, we will present results on an modified (ICP) etching technique that allows for low damage device processing and improved reliability.

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1.Feng, M. et al. “Device techniques for RF Front-End Circuits in next generation wireless communicationsA Review Paper, Proceedings of the IEEE. Vol. 92, No 2, February 2004.
2.Clarke, F.W., Shur, M., Khan, M.A. et al. “Gate Current and Analytical Modeling in Insulating Gate III-N Hetero-Structure Field Effect transistors” Presented at the MRS Meeting, Dec. 2–6, 2002 (Boston), Published in MRS Proceedings on GaN (2003).
3.Manfra, M.J. et al. “High Quality AlGaN /GaN HEMTs Grown by MBE on Semi-Insulating Silicon Carbide” Presented at the MRS Meeting, Dec.2–6, 2002 (Boston), Published in MRS Proceedings on GaN (2003)
4.Sood, A.K., Clarke, F.W., Hwang, J.C.M., Dabiran, A., Souzis, A. et al. “Development of High Performance AlGaN / GaN High Electron Mobility Transistor for RF ApplicationsProceedings of SPIE, Volume 5550, 130144, 2004.10.1117/12.561584
5.Ambacher, O., “Two Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization in Undoped and Doped AlGaN/GaN Heterostructures”, J. Applied Phys., 87, pp. 334344, 2000 10.1063/1.371866
6.Ambacher, O., “Two Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization in N- and Ga-Face AlGaN/GaN Heterostructures”, J. Applied Phys., 85, pp. 32223233, 1999 10.1063/1.369664
7.Ambacher, O., “Electronics and sensors based on Pyroelectric AlGaN/GaN Hetero-structuresPhys. Stat. Sol., No. 6, 18781907 (2003)

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Design and Development of MBE Grown AlGaN/ GaN HEMT Devices on SiC Substrates for RF Applications

  • Ashok K Sood (a1), Rajwinder Singh (a2), Yash R Puri (a3), Frederick W Clarke (a4), Amir Dabiran (a5), Peter Chow (a6), Jie Deng (a7) and James C.M. Hwang (a8)...

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