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Design and Characterization of a UHV Arcjet Nitrogen Source

Published online by Cambridge University Press:  10 February 2011

R. N. Bicknell-Tassius ,
P. W. Deelman ,
P. J. Grunthaner ,
F. J. Grunthaner ,
C. E. Bryson ,
E. Snyder ,
J. L. Giuliani ,
J. P. AprUzes  and
P. Kepple
R. N. Bicknell-Tassius
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California
P. W. Deelman
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California
P. J. Grunthaner
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California
F. J. Grunthaner
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California
C. E. Bryson
Affiliation:
Surface/Interface, Inc., Mountain View, California
E. Snyder
Affiliation:
Surface/Interface, Inc., Mountain View, California
J. L. Giuliani
Affiliation:
Plasma Physics Division, Naval Research Laboratory, Washington, D.C.
J. P. AprUzes
Affiliation:
Plasma Physics Division, Naval Research Laboratory, Washington, D.C.
P. Kepple
Affiliation:
Plasma Physics Division, Naval Research Laboratory, Washington, D.C.
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Abstract

A UHV-compatible nitrogen arcjet suitable for the growth of III-nitrides by molecular beam epitaxy is described and characterized. The arcjet operates at powers between 10W and 300W (the highest power used for these studies); typical nitrogen flows range between 5sccm and 100sccm. Optical emission spectra show the presence of activated atomic (N*) and molecular (N2*) nitrogen. A collisional radiative equilibrium model has been employed to provide insight into the excitation state of the active nitrogen. These results indicate that the arcjet is capable of supplying atomic nitrogen fluxes consistent with growth rates on the order of several monolayers per second. Langmuir probe measurements conducted near the position of the sample holder in the MBE chamber show the charged particle flux density is very low. The arcjet operates over a large powerpressure parameter space, and properties of the arc can be systematically “tuned” to provide a source suitable for selected-energy-epitaxy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 325
Copyright
Copyright © Materials Research Society 1998

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