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Depth Profile Of Point Defects In Ion Implanted n+p and p+n Junctions Formed By 450°C Post-Implantation Annealing And Impact Of Defects On Junction Characteristics

Published online by Cambridge University Press:  15 February 2011

Mauricio Massazumi Oka ,
Akira Nakada ,
Yukio Tamai ,
Kei Kanemoto ,
Tadashi Shibata  and
Tadahiro Ohmi
Mauricio Massazumi Oka
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, (TEL: +81-22-217-7124 / +81-22-263-9395)
Akira Nakada
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, (TEL: +81-22-217-7124 / +81-22-263-9395)
Yukio Tamai
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, (TEL: +81-22-217-7124 / +81-22-263-9395)
Kei Kanemoto
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, (TEL: +81-22-217-7124 / +81-22-263-9395)
Tadashi Shibata
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, (TEL: +81-22-217-7124 / +81-22-263-9395)
Tadahiro Ohmi
Affiliation:
Department of Electronic Engineering, Faculty of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980–77, Japan, (TEL: +81-22-217-7124 / +81-22-263-9395)
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Abstract

It is shown that defects generated by ion implantation, remaining after annealing at low temperature, are deep-distributed in the bulk silicon and their amount is demonstrated to be function of the substrate type and the implanted ion species. The confirmation that defects penetrate deeply into the silicon is made by a new method that consists in damaging by ion implantation a previously formed pn junction that shows very low leakage current and has a deep junction. It is proposed that the dopants in the substrate act as nucleation centers for the formation of point defect clusters and that these clusters actually degrade the junction. It was found that point defects penetrate much more deeply in p+n junctions than in n+p junctions. It was also found that BF2+ introduces much more defects into the silicon than As+, owing to the presence of fluorine. The leakage currents at 5 V of n+p and p+n diodes made by implantation of P+ and B+, respectively, could be lowered by one to two orders of magnitude with respect to values obtained by implantation of As+ and BF2+ because the former ones produce less defects than the latter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 163
Copyright
Copyright © Materials Research Society 1997

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