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Depth Oscillations of Planar Channeling Yields in InP and GaP for Lattice Location Applications.

Published online by Cambridge University Press:  26 February 2011

M.L. Swanson ,
N.R. Parikh ,
G.S. Sandhu ,
E.C. Frey ,
Z.H. Zhanc  and
W.K. Chu
M.L. Swanson
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
N.R. Parikh
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
G.S. Sandhu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
E.C. Frey
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
Z.H. Zhanc
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
W.K. Chu
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599-3255
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Abstract

For compound semiconductors with the diamond structure, (111) planar channel walls contain different atomic species when viewed from different sides; thus under channeling conditions, the yields of ions backscattered from the different species oscillate with depth in opposite senses for ion beams directed towards the different channel sides. We have studied this effect for 2 MeV He ions in a (111) channel of InP crystals. The application of this channeling phenomenon to the determination of the lattice sites of solute atoms was demonstrated for implanted In and Sb atoms at different depths in GaP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 409
Copyright
Copyright © Materials Research Society 1989

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References

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