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The Depth Dependence of Photoluminescence and Electrolytic Electroluminescence in Porous Silicon Films

Published online by Cambridge University Press:  28 February 2011

M. I. J. Beale ,
T. I. Cox ,
L. T. Canham  and
D. Brumhead
M. I. J. Beale
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK
T. I. Cox
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK
L. T. Canham
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK
D. Brumhead
Affiliation:
Defence Research Agency, St Andrews Road, Malvern, Worcs, WR14 3PS, UK
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Abstract

The depth dependence of the photoluminescence (PL) spectrum, both in terms of intensity and wavelength of the peak, is correlated with the electrochemical and chemical processes occurring during the formation of the porous silicon. The depth dependence of the intensity of the electroluminescence (EL) under both anodic bias and cathodic bias, in solutions containing 1M H2SO4 and 0.1M Na2S2O8, is found to be identical with that of the PL. These observations strongly suggest that the silicon skeleton is highly conductive during electrolytic EL, in marked contrast to its high resistivity in air. Strong evidence is provided linking the electrolytic EL to the PL. We extend the quantum confinement based model for PL to the case of electrolytic EL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 377
Copyright
Copyright © Materials Research Society 1993

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