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Depth and Time Dependence of Polystyrene Chain Diffusion Near the Polystyrene/Silicon Interface

  • Y. Trzhemechny (a1), V. Hapovalov (a1), K. G. Hou (a1), S. A. Chwarz (a1), J. Sokolov (a2) and M. H. Rafailovich (a2)...

Abstract

We report on the results for the diffusion coefficient (D*) of polystyrene (PS) chains near the PS/Silicon interface. The present study employs secondary ion mass spectrometry (SIMS) to examine diffusion from a deuterated marker layer in thin PS films on silicon. The observed SIMS depth profiles are fit to numerical simulations of the diffusion process. The best fit is obtained for a super-linear dependence of D * vs. distance from the silicon wall. A non-trivial time dependence extending over tens of hours is observed for all the models tested.

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Depth and Time Dependence of Polystyrene Chain Diffusion Near the Polystyrene/Silicon Interface

  • Y. Trzhemechny (a1), V. Hapovalov (a1), K. G. Hou (a1), S. A. Chwarz (a1), J. Sokolov (a2) and M. H. Rafailovich (a2)...

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