Hostname: page-component-7c8c6479df-24hb2 Total loading time: 0 Render date: 2024-03-19T04:00:30.290Z Has data issue: false hasContentIssue false

Deposition of Titanium Oxide Films from Metal-Organic Precursor by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Atsushi Nagahori
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Rishi Raj
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

Titanium oxide thin films were deposited at room temperature by the Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition (ECR-PACVD) method. Effects of deposition temperature, microwave power and plasma gas pressure were investigated. Both Ar and O2 plasma were used to deposit films from titanium isopropoxide (Ti(OC3H7)4) precursor. Transparent titanium oxide films were obtained with O2 plasma. Refractive index and thickness were measured by ellipsometry and the films were characterized by x-ray diffraction.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ono, T., Oda, M., Takahashi, C. and Matsuo, S., J. Vac. Sci. Technol. B 4, 696 (1986).Google Scholar
2. Asmussen, J., J. Vac. Sci. Technol. A 7, 883 (1989).Google Scholar
3. Hu, Y. Z., Li, M., Simko, J., Andrews, J. and Irene, E. A., in CVD-XI, proceedings of the 11 th international conference on Chemical Vapor Deposition, 1990, edited by Spear, K. E. and Cullen, G. W. (Electrochemical Society, Pennington, NJ, 1990), pp. 166172.Google Scholar