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Deposition of Thin Films of Silicon Carbide on Fused Quartz and on Sapphire by Laser Ablation of Ceramic Silicon Carbide Targets

Published online by Cambridge University Press:  01 January 1992

L. Rimai ,
R. Ager ,
J. Hangas ,
E. M. Loaothetis ,
Nayef Abu-ageel  and
M. Aslam
L. Rimai
Affiliation:
Ford Motor Co. Research Laboratory
R. Ager
Affiliation:
Ford Motor Co. Research Laboratory
J. Hangas
Affiliation:
Ford Motor Co. Research Laboratory
E. M. Loaothetis
Affiliation:
Ford Motor Co. Research Laboratory
Nayef Abu-ageel
Affiliation:
Dept of E.E., Michigan State University
M. Aslam
Affiliation:
Dept of E.E., Michigan State University
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Abstract

Ablation of ceramic silicon carbide with 351 nm excimer radiation was used to depositSIC films on fused silica and on sapphire. For deposition temperatures above 850° C, diffraction shows the films to be crystalline with the [111] axis preferentially oriented normally to the film. Optical spectra show an indirect energy gap at 2.2 eV, near that for the cubic polytype, although the 200 diffractions are absent. Room temperature resistivities range between .02 to .1 Ωcm. Deposition below 600° C yields amorphous SiC with no diffraction bands, low and variable optical band gap and very high resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 495
Copyright
Copyright © Materials Research Society 1993

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References

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