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Deposition of Dielectric Thin Films by Irradiation of Condensed Reactant Mixtures

Published online by Cambridge University Press:  15 February 2011

J. F. Moore ,
D. R. Strongin ,
M. W. Ruckman  and
M. Strongin
J. F. Moore
Affiliation:
State University of New York, Stony Brook, New York, 11794
D. R. Strongin
Affiliation:
State University of New York, Stony Brook, New York, 11794
M. W. Ruckman
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton, New York, 11973
M. Strongin
Affiliation:
Physics Department, Brookhaven National Laboratory, Upton, New York, 11973
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Abstract

Results of ongoing investigations of a new method for processing molecular solids to form refractory thin films are presented. We have extended past work on boron nitride and alumina growth from molecular solids induced by synchrotron radiation (SR), to silica growth from tetramethylsilane and water at 80 K. Also reported are experiments where alumina is formed using 4.64 eV laser irradiation. The majority of the results suggest that with SR, the film growth is induced by secondary electrons from the substrate, whereas laser light excites the film growth by direct photolysis. Implications of this will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 81
Copyright
Copyright © Materials Research Society 1994

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