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Deposition of Diamond using an Electron Cyclotron Resonance Plasma System

Published online by Cambridge University Press:  21 February 2011

Donald R. Gilbert ,
Rajiv Singh ,
W. Brock Alexander ,
Dong Gu Lee  and
Patrick Doering
Donald R. Gilbert
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Rajiv Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
W. Brock Alexander
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Dong Gu Lee
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
Patrick Doering
Affiliation:
LMA, Inc., 93 West Tech Center, Medfield, MA 02052
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Abstract

We have used an electron cyclotron resonance plasma system to perform chemical vapor deposition experiments on single-crystal, (110) oriented diamond substrates. The depositions were carried out at 0.060 Torr using mixtures of methanol in hydrogen. Substrate temperatures were varied from approximately 620 to 800 °C The film morphology was examined using SEM and microstructural phase determination was attempted using micro-Raman spectroscopy. Based on the results of these experiments, we have determined general trends for the characteristics of films deposited on diamond from the ECR plasma at low pressures and temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 301
Copyright
Copyright © Materials Research Society 1994

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References

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