Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-24T02:51:38.955Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of a-Ge:H in a Remote Plasma System

Published online by Cambridge University Press:  25 February 2011

M. Heintze ,
C. E. Nebel  and
G. H. Bauer
M. Heintze
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
C. E. Nebel
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
G. H. Bauer
Affiliation:
Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 7000-Stuttgart-80, FRG.
Get access

Abstract

The remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 565
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bàrdoš, L., Vacuum 38, 637 (1988).Google Scholar
[2] Lucovsky, G., Richard, P.D., Tsu, D.V., Lin, S.Y. and Markunas, R.J., J. Vac. Sci. Technol. A4, 681 (1986);Google Scholar
Parson, G.N., Tsu, D.V. and Lucovsky, G., J. Non-Cryst. Sol. 97&98, 1375 (1987).Google Scholar
[3] Johnson, N.M., Walker, J., Doland, CM., Winer, K. and Street, R.A., Appl. Phys. Lett. 54, 1872 (1989).Google Scholar
[4] Brandt, M.S., Chrysostomides, J., Koynov, S. and Petrova-Koch, V. J. Non-Cryst. Sol. 115, 105 (1989).Google Scholar
[5] Toyoshima, Y., Kumata, K., Itoh, U., Arai, K., Matsuda, A., Washida, N., Inoue, G., Katsuumi, K., Appl. Phys. Lett. 46, 584 (1985).Google Scholar
[6] Kolts, J.H. and Setser, D.W., in “Reactive Intermediates in the Gas Phase”, edited by Setser, D.W. (Academic Press, New York, 1979), pp. 151-231.Google Scholar
[7] Reid, R.C., Prausnitz, J.M. and Sherwood, T.K., “The Properties of Gases and Liquids”, (McGraw Hill Book Company, 1977).Google Scholar
[8] Matsuda, A. and Tanaka, K., J. Appl. Phys. 60, 2351 (1986).Google Scholar
[9] Li, Y.-M., Turner, W. A., Lee, C. and Paul, W. in “Amorphous Silicon Technology -1989”, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y. and LeComber, P.G. (Mater. Res. Soc. Proc. 149, Pittsburgh, PA 1989) pp. 177-192.Google Scholar
[10] Tanaka, K. and Tsu, R., Phys. Rev. B 24, 2038 (1981).Google Scholar
[11] Stutzmann, M., Phil. Mag. B 60, 531 (1989).Google Scholar
[12] Collins, C.B. and Robertson, W.W., J. Chem. Phys. 40, 701 (1964).Google Scholar