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Deposition and Properties of AlN Films Prepared by Low Pressure CVD with a Metalorganic Precursor

Published online by Cambridge University Press:  15 February 2011

M. J. Cook ,
P. K. Wu ,
N. Patibandla ,
W. B. Hillig  and
J. B. Hudson
M. J. Cook
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
P. K. Wu
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
N. Patibandla
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
W. B. Hillig
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
J. B. Hudson
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Aluminum nitride films were deposited on Si (100) and sapphire (1102) substrates by low pressure chemical vapor deposition using the metalorganic precursor trisdimethylaluminum amide, [(CH3)2AlNH2]3. Depositions were carried out in a cold wall reactor with substrate temperatures between 500 and 700 °C and precursor temperatures between 50 and 80 °C. The films were analyzed by X-ray photoelectron spectroscopy, X-ray diffraction, optical microscopy and scanning electron microscopy. The films were generally smooth and adherent with colors ranging from transparent to opaque grey. Cracking and spallation were seen to occur at high film thickness. Deposition rates ranged from 20 to 300 Å/min and increased with both precursor and substrate temperature. Carbon concentrations were small, < 5 at. %, while oxygen concentrations were higher and showed a characteristic profile versus depth in the film. High temperature compatibility testing with sapphire/AlN/MoSi2 samples was carried out to determine film effectiveness as a fiber coating in a composite.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 101
Copyright
Copyright © Materials Research Society 1994

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