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Dependence of Steady-State Defect Density in Hydrogenated Amorphous Silicon on Carrier Generation Rate Studied Over a Wide Range

Published online by Cambridge University Press:  01 January 1993

Nobuhiro Hata ,
Gautam Ganguly  and
Akihisa Matsuda
Nobuhiro Hata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
Gautam Ganguly
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan
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Abstract

Measurements of the steady-state defect density (Nst) in hydrogenated amorphous silicon under illumination of pulse-laser light, as well as of continuous light, were carried out; and the dependence of Nst on the effective rate of carrier generation (G) is presented. The values of G ranged from 8 x 1021 to 2.4 × 1023 cm-3 s-1, while the illumination temperature was kept at 30 °C or at 105 °C. The results showed trends of Nst increasing with G similarly to the trends in the literature, but covered a higher and wider G range, and fitted a defect model which assumes a limited number of possible defect states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 577
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Lee, C., Olsen, W. D., Taylor, P. C., Ullal, H. S., and Ceasar, G. P., Amer. Inst. Phys. Conf. Proc. 120, 205 (1984).Google Scholar
2. Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B32, 23 (1985).Google Scholar
3. Ohsawa, M., Hama, T., Akasaka, T., Sakai, H., Ishida, S., and Uchida, Y., J. Non-Cryst. Solids 97&98, 91 (1987).Google Scholar
4. Ohagi, H., Nakata, J., Miyanishi, A., Imao, S., Jeong, M., Shirafuji, J., Fujibayashi, K., and Inuishi, Y., Jpn. J. Appl. Phys. 27, 2245 (1988).Google Scholar
5. Redfield, D., Appl. Phys. Lett. 52, 492 (1988).Google Scholar
6. Redfield, D. and Bube, R. H., Appl. Phys. Lett. 54, 1037 (1989).Google Scholar
7. Park, H. R., Liu, J. Z., and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989).Google Scholar
8. Park, H. R., Liu, J. Z., Roca i Cabarrocas, P., Maruyama, A., Isomura, M., Wagner, S., Abelson, J. R., and Finger, F., Appl. Phys. Lett. 57, 1440 (1990).Google Scholar
9. Shimizu, T., Matsumoto, M., Yoshita, M., Iwami, M., Morimoto, A., and Kumeda, M., J. Non-Cryst. Solids 137&138, 391 (1991).Google Scholar
10. Santos, P. V., Jackson, W. B., and Street, R. A., Phys. Rev. B44, 12800 (1991).Google Scholar
11. Grimbergen, M., Benatar, L.E., Fahrenbruch, A., Lopez-Otero, A., Redfield, D., and Bube, R.H., Amer. Inst. Phys. Conf. Proc. 234, 138 (1991).Google Scholar
12. Wu, Z. Y., Siefert, J. M., and Equer, B., J. Non-Cryst. Solids 137–138, 227 (1991).Google Scholar
13. Isomura, M., Hata, N., and Wagner, W., J. Non-Cryst. Solids 137&138, 223 (1991).Google Scholar
14. Hata, N., Isomura, M., and Wagner, S., Appl. Phys. Lett. 60, 1462 (1992).Google Scholar
15. Stutzmann, M., Nunnenkamp, J., Brandt, M. S., and Asano, A., Phys. Rev. Lett. 67, 2347 (1991).Google Scholar
16. Stutzmann, M., Nunnenkamp, J., Brandt, M. S., Asano, A., and Rossi, M. C., J. Non-Cryst. Solids 137–138, 231 (1991).Google Scholar
17. Rossi, M. C., Brandt, M. S., and Stutzmann, M., Appl. Phys. Lett. 60, 1709 (1992).Google Scholar
18. Hata, N., Ganguly, G., Wagner, S., and Matsuda, A., Appl. Phys. Lett. 61, 1817 (1992).Google Scholar
19. Matsuda, A. and Hata, N., in Glow-Discharge Hydrogenated Amorphous Silicon, edited by Tanaka, K. (KTK Scientific Publishers, Tokyo, Japan, 1989) pp. 9–38.Google Scholar
20. Isomura, M., Xu, X., and Wagner, S., Solar Cells 30, 177 (1991).Google Scholar
21. Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S., and Chu, T.L., Appl. Phys. Lett. 50, 1521 (1987).Google Scholar
22. Sameshima, T., Hara, M., and Usui, S., Jpn. J. Appl. Phys. 28, L2131 (1989).Google Scholar
23. Park, H. K., Xu, X., and Grigoropoulos, C. P., Appl. Phys. Lett. 61, 749 (1992).Google Scholar
24.see, for example, American Institute of Physics Handbook, Third Edition, coordinating editor Gray, D. E. (McGraw-Hill, New York, 1982).Google Scholar
25. Wang, N., Morin, P. A., Chu, V., Isomura, M., Gleskova, H., and Wagner, S., Mater. Res. Soc. Symp. Proc. 258, 589 (1992).Google Scholar
26. Chen, L. and Yang, L., J. Non-Cryst. Solids 137&138, 1185 (1991).Google Scholar
27. Redfield, D. and Bube, R. H., Phys. Rev. Lett. 65, 464 (1990).Google Scholar
28. Fedders, P. A., Fu, Y., and Drabold, D. A., Phys. Rev. Lett. 68, 1888 (1992).Google Scholar
29. Tanaka, K., J. Non-Cryst. Solids 137&138, 1 (1991).Google Scholar
30. Winer, K., Phys. Rev. B41, 12150 (1990).Google Scholar