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Dependence of Hydrogen Incorporation in Undoped a-Si:H and µc-Si:H on Hydrogen Dilution During Pecvd

  • N. M. Johnson (a1), S. H. Wolff (a1), C. D. Doland (a1) and J. Walker (a1)

Abstract

New results are reported on the effect of hydrogen dilution on the incorporation of hydrogen in undoped, unalloyed silicon films that were deposited by plasma-enhanced chemical vapor deposition in an rf-glow discharge system. A crystalline phase was detected for dilution ratios (H2: SiH 4) of 20:1 and greater. This phase change was accompanied by the appearance of higher-order silicon-hydride complexes. It was further observed that the H concentration in the films increased with dilution for ratios of 10:1 and greater. These results are compared with other recent studies of hydrogen dilution.

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Present address: Princeton University, Princeton, NJ.
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Dependence of Hydrogen Incorporation in Undoped a-Si:H and µc-Si:H on Hydrogen Dilution During Pecvd

  • N. M. Johnson (a1), S. H. Wolff (a1), C. D. Doland (a1) and J. Walker (a1)

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