Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-26T11:26:31.574Z Has data issue: false hasContentIssue false
  • English
  • Français

Dependence of a-Si:H Degradation on i-Layer Thickness and Photon Energy

Published online by Cambridge University Press:  01 January 1993

H. Paes ,
C. Achete  and
W. Losch
H. Paes
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, P. O. Box: 68.505 Rio de Janeiro -RJ - Brazil - 21.945-970 - fax: (005521)290.6626
C. Achete
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, P. O. Box: 68.505 Rio de Janeiro -RJ - Brazil - 21.945-970 - fax: (005521)290.6626
W. Losch
Affiliation:
LEMI/COPPE/Universidade Federal do Rio de Janeiro, P. O. Box: 68.505 Rio de Janeiro -RJ - Brazil - 21.945-970 - fax: (005521)290.6626
Get access

Abstract

Metastable light-induced changes in hydrogenated amoiphous silicon (a-Si:H) have been monitored by stationary single photocarrier charge collection in p-i-n diodes under reverse bias. The influence of the following parameters has been systematically investigated: i-layer thickness, applied voltage and illumination time and energy. A strong dependence of cell degradation on i-layer thickness is observed. In the case of degraded diodes superlinear current vs. voltage (Iph αVm) in the low voltage regime were observed. These results can be related to space-charge-limited photocurrents. The results from variation of photon energy and single and/or double carrier injection indicate that recombination rather than single-carrier trapping plays a key role in metastable defect creation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 595
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Staebler, D. and Wronski, C., Appl. Phys. Lett., 31, 292 (1977).Google Scholar
2) Fortmann, C., Lange, S., Hicks, M. and Wronski, C., J. Appl. Phys., 64, 4219 (1988).Google Scholar
3) Stutzmann, M., Jackson, W. and Tsai, C., Phys. Rev. B 32, 23 (1985).Google Scholar
4) Adler, D., J. de Phys. (Paris), 42–C4, 3 (1981).Google Scholar
5) Schumm, G., and Bauer, G., Phil. Mag. B 64, no.4, 515 (1991).Google Scholar
6) Smith, Z. and Wagner, S., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific, Singapore, 1989), p.409.Google Scholar
7) Branz, H. and Crandall, R., Solar Cells, 27, 159 (1989).Google Scholar
8) Schumm, G. and Bauer, G., 22th IEEE Photovoltaic Spec. Conf. Proc. (1991) pl225.Google Scholar
9) Street, R., Appl. Phys. Lett., 57, 1334 (1990).Google Scholar
10) Yamagishi, H., Kida, H., Kamada, T., Okamoto, H. and Hamakawa, Y., Appl. Phys. Lett., 47, 860 (1986).Google Scholar
11) Bennett, M., Newton, J. and Rajan, K., 7th Photovoltaic Energy Conf. Proc. (1986) p.544.Google Scholar