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Density of States Spectroscopy in p-Type a-Si:H and a-SiC:H
Published online by Cambridge University Press: 21 February 2011
Abstract
We derive a closed form expression for differential junction capacitance applicable when the density of states (DOS) varies exponentially with energy. Using this expression, we analyze p/n junction capacitance measurements that probe the DOS in boron doped hydrogenated amorphous silicon and silicon carbide alloy. In both materials we find that the p-layer DOS is described by an exponential increase with energy above the Fermi level.
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- Copyright © Materials Research Society 1991
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