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Degradation of Luminescence from GaN During Electron Bombardment: Effects of Beam Voltage, Current and Scanned Area

Published online by Cambridge University Press:  17 March 2011

E. M. Campo ,
G. S. Cargill III ,
J. Ramer ,
M. Schurman  and
I. T. Ferguson
E. M. Campo
Affiliation:
Lehigh University, Bethlehem, PA 18015
G. S. Cargill III
Affiliation:
Lehigh University, Bethlehem, PA 18015, gsc3@lehigh.edu
J. Ramer
Affiliation:
EMCORE Corp., Somerset, NJ 08873
M. Schurman
Affiliation:
EMCORE Corp., Somerset, NJ 08873
I. T. Ferguson
Affiliation:
EMCORE Corp., Somerset, NJ 08873
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Abstract

Near-band-edge cathodoluminescence emission for some nominally undoped GaN samples decreases with time during electron bombardment in a scanning electron microscope. The rate of decrease depends on the incident beam voltage and current and on the size of the area being scanned, which is determined by the magnification used for the scanning electron microscope. Faster intensity decreases occur with lower beam voltages (10kV versus 20kV), higher beam currents (600nA or 200nA versus 35nA) and smaller scanned areas (120K magnification versus 15K magnification). For larger scanned areas, the maximum luminescence intensity occurs 10's or 100's of seconds after the start of electron bombardment, and the intensity then decreases with further bombardment. In some cases the size of the degraded region is larger than the bombarded area. These observations suggest that the degradation is caused by electromigration of impurities or other charged defects within the GaN resulting from local charging by electron bombardment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.27
Copyright
Copyright © Materials Research Society 2001

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References

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