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Degradation of InGaN/AlGaN LED on Sapphire Substrate Grown by MOCVD

Published online by Cambridge University Press:  10 February 2011

T. Egawa ,
H. Ishikawa ,
T. Jimbo  and
M. Umeno
T. Egawa
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
H. Ishikawa
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
T. Jimbo
Affiliation:
Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
M. Umeno
Affiliation:
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466, Japan
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Abstract

We report an optical degradation of an InGaN/AIGaN double-heterostructure light-emitting diode (LED) on a sapphire substrate grown by metalorganic chemical vapor deposition. The InGaN/AIGaN LED exhibited an optical output power of 0.17 mW, external quantum efficiency of 0.2 %, and the peak emitting spectrum at 437 nm with full width at half-maximum of 63 nm under 30 mA dc operation at 300 K. The InGaN/AIGaN LED showed the optical degradation under high injected current density. Electroluminescence, electron-beam induced current and cathodoluminescence observations show that the degraded InGaN/AIGaN LED exhibits formation and propagation of dark spots and a crescent-shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1 × 10-3, 1.9 × 10-3 and 3.9 × 10-3 h-1 at ambient temperatures of 30, 50 and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1191
Copyright
Copyright © Materials Research Society 1997

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References

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