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Degradation of Hydrogen-Passivated p-Type Layers in GaAs by Minority Carrier Injection and Reverse Bias Annealing

Published online by Cambridge University Press:  16 February 2011

A. J. Tavendale ,
S. J. Pearton ,
A. A. Williams  and
D. Alexiev
A. J. Tavendale
Affiliation:
ANSTO Lucas Heights Research Labs, Menai NSW Australia
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. A. Williams
Affiliation:
ANSTO Lucas Heights Research Labs, Menai NSW Australia
D. Alexiev
Affiliation:
ANSTO Lucas Heights Research Labs, Menai NSW Australia
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Abstract

We detail experiments showing that acceptor passivation by atomic hydrogen in p-type GaAs is unstable to either illumination, forward bias annealing or reverse bias annealing. The long-term stability of operation of devices employing hydrogen in or near the active region of FETs or quantum-well lasers is therefore questionable. The systematics of acceptor reactivation during minority carrier injection or reverse bias annealing are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 87
Copyright
Copyright © Materials Research Society 1990

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References

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