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Degradation of Hydrogen-Passivated p-Type Layers in GaAs by Minority Carrier Injection and Reverse Bias Annealing
Published online by Cambridge University Press: 16 February 2011
Abstract
We detail experiments showing that acceptor passivation by atomic hydrogen in p-type GaAs is unstable to either illumination, forward bias annealing or reverse bias annealing. The long-term stability of operation of devices employing hydrogen in or near the active region of FETs or quantum-well lasers is therefore questionable. The systematics of acceptor reactivation during minority carrier injection or reverse bias annealing are presented.
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- Copyright © Materials Research Society 1990
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