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Degradation in Oxide Reliability Due to the Presence of Nitrogen in the Oxidation Ambient

Published online by Cambridge University Press:  21 February 2011

Greg A. Hames ,
J. J. Wortman ,
S. E. Beck  and
B. J. Shemanski
Greg A. Hames
Affiliation:
Center for Advanced Electronic Materials Processing, North Carolina State University, Raleigh, N. C, 27695
J. J. Wortman
Affiliation:
Center for Advanced Electronic Materials Processing, North Carolina State University, Raleigh, N. C, 27695
S. E. Beck
Affiliation:
Air Products and Chemicals, Inc.,7201 Hamilton Blvd., Allentown, PA, 18195
B. J. Shemanski
Affiliation:
Air Products and Chemicals, Inc.,7201 Hamilton Blvd., Allentown, PA, 18195
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Abstract

Ultrathin rapid thermal oxides have been formed in oxygen with varying levels of nitrogen incorporated into the oxidation ambient. Metal-oxide-semiconductor capacitors and MOSFET devices were subsequently fabricated and tested. Device reliability was degraded by the addition of nitrogen into the oxidation ambient. Time-independent catastrophic breakdown measurements showed a large increase in the number of extrinsic breakdowns in devices formed in higher levels of nitrogen. Device performance was measured by interface trap density, subthreshold slope, channel mobility and threshold voltage. A small increase in the interface trap density was observed for increasing levels of nitrogen in the oxidation ambient. However, no trends were observed for MOSFET devices in terms of subthreshold slope, channel mobility or current drive. No improvement in the interface state generation rate due to nitrogen incorporation in the oxidation ambient was observed in this study. X-ray photoelectron spectroscopy detected no nitrogen in the oxides indicating less than 1% nitrogen incorporation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 645
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Chapman, D. T., Melzak, J. M., Fordham, M. J., Wortman, J. J., Öztörk, M. C., and Sorrell, F. Y., Extended Abs. 179th Electrocemical Soc. Mtg., Washington, DC, no. 358, May 5-10, 541, 1991.Google Scholar
2 Yamabe, K., Taniguchi, K., and Matsushita, Y., IEEE/ International Reliability Physics Symposium, p. 184, 1983.Google Scholar
3 Ting, W.,, Lo, G. Q., Ahn, J., Chu, T. Y., and Kwong, D. L., IEEE Electron Device Letters, vol. 12, no. 8, 416, Aug. 1991.Google Scholar