Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-27T02:53:48.768Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects Introduced by Plasma Processing of Silicon

Published online by Cambridge University Press:  26 February 2011

J. L. Benton
J. L. Benton*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Get access

Abstract

The electrical and optical properties of defects introduced by Reactive Ion Etching (RIE) in the near surface region of Si after dry etching with various gases and plasma conditions is studied with spreading Resistance (SR), photoluminescence (PL), and capacitance-voltage profiling (C-V). Plasma etching in chlorine and fluorine based gases produce donors at the surface in both n-type and p-type, Czochralski and float-zone silicon. Isochronal annealing reveals the presence of two distinct regions of dopant compensation. The surface damage region is confined to 1000 Å and survives heat treatment at 400°C, while the defect reaction region extends ≥ 1 μm in depth and recovers by 250°C. A comprehensive picture of the interstitial defect reactions in RIE silicon is completed. The interstitial defects, Ci and Bi, created in the ion damaged near surface region, undergo recombination enhanced diffusion caused by the presence of ultraviolet light in the plasma, resulting in the long range diffusion into the Si bulk. Subsequently, the interstitial atoms are trapped by the background impurities forming the defect pairs, CiOi, CSCi, or BiOi, which are observed experimentally. The depth of the diffusion-limited trapping and the probability of forming specific pairs depends on the relative concentrations of the reactants, oxygen, carbon or boron, present in the bulk material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1027
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Benton, J. L., Michel, J., Kimerling, L. C., Weir, B. E., Gottscho, R., J. Elect. Mat. 20 (9), 643 (1991).CrossRefGoogle Scholar
2. Benton, J. L., Weir, B. E., Eaglesham, D. J., Gottscho, R. A., Michel, J. and Kimerling, L. C., J. Vac. Sci. Tech. B 10 (1), 540 (1991).Google Scholar
3. Benton, J. L., Kennedy, M. A., Michel, J. and Kimerling, L. C. in Defects in Semiconductors 16 edited by Davies, G., DeLeo, G. G. and Stavola, M. (Trans Tech Publications, Zurich, 1992), p. 1433.Google Scholar
4. Strunk, H. P., Cerva, H. and Mohr, E. G., J. Electrochem. Soc. 135 (11), 2876, (1988).Google Scholar
5. Oehrlein, G. S., Tromp, R. M., Tsang, J. C., Lee, Y. H., and Petrillo, E. J., J. Electrochem. Soc., 132, No. 6, 1441, (1985).Google Scholar
6. Fonash, Stephen J., Ashok, S. and Singh, Ranbir, Appl. Phys. Lett. 39 (5), 423, (1981).CrossRefGoogle Scholar
7. Pang, S. W., Rathman, D. D., Silversmith, D. J., Mountain, R. W. and DeGraff, P. D., J. Appl. Phys. 54 (6), 3272 (1983).CrossRefGoogle Scholar
8. Weber, J. and Singh, M., Appl. Phys. Lett 49 (23), 1617, (1986).CrossRefGoogle Scholar
9. Weber, J. and Sawyer, W. D., Defect Control in Semiconductors edited by Sumino, K. (Elsevier, Amsterdam, 1990) p. 513.Google Scholar
10. Henry, A., Awadelkarim, O. O., Lindstrom, J. L., Oehrlein, G. S. J. Appl. Phys., 66 (11), 5388 (1989).Google Scholar
11. Singh, M., Weber, J., Zundel, T., Konuma, M. and Cerva, H., Materials Science Forum, 38–41, 1033 (1989).Google Scholar
12. O'Donnell, K. D., Lee, K. M. and Watkins, G. D., Physica (Ultrecht)B 116, 258 (1983).Google Scholar
13. Davis, G., Lightowlers, E. C., Woolley, R., Newman, R. C. and Oates, A. S., J. Phys. C, 17, L499 (1984).Google Scholar
14. Drevinsky, P. J., Caefer, C. E., Kimerling, L. C. and Benton, J. L., Defect Control in Semiconductors, edited by Sumino, K. (Elsevier, Amsterdam, 1990) p. 341.Google Scholar
15. Seager, C. H., Anderson, R. A., and Brice, D. K. J. Appl. Phys., 68 (7), 3268 (1990).Google Scholar
16. Tavendale, A. J., Alexiev, D. and Williams, A. A., Appl. Phys. Lett., 47 (3), 316 (1985).Google Scholar
17. Kimerling, L. C., Asom, M. T., Benton, J. L., Drevinsky, P. J. and Caefer, C. E., Materials Science Forum, 38–41, 141, (1989).Google Scholar
18. Watkins, G. D., in Radiation Damage in Semiconductors, edited by Urli, N. B. and Corbett, J. M., (Inst. of Phys. Conf. Ser. 31, London, 1977), p. 273.Google Scholar
19. Asom, M. T., Benton, J. L., Sauer, R., and Kimerling, L. C, Appl. Phys. Lett., 51, (4), 256 (1987).Google Scholar
20. Tipping, A. K. and Newman, R. C., Semicond. Sci. Technol., 2, 315 (1987).Google Scholar