Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-27T04:41:43.853Z Has data issue: false hasContentIssue false
  • English
  • Français

Defects in Low-Temperature-Grown MBE GaAs as Studied by a Variation of TSC Spectroscopy

Published online by Cambridge University Press:  15 February 2011

Z-Q Fang  and
D. C. Look
Z-Q Fang
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435
D. C. Look
Affiliation:
Physics Department, Wright State University, Dayton, OH 45435
Get access

Abstract

A zero-bias thermally stimulated current (TSC) spectroscopy under both optical (1.96eV) and electrical excitation using samples with a Schottky contact on the top was applied to annealed LTMBE GaAs grown at different temperatures, and bulk SI GaAs with different stoichiometries. The results show that: 1) the new TSC technique is capable of revealing the traps at 235K<T<380K and is effective in indicating the crystal stoichiometry of bulk SI GaAs; 2) the driving force for the currents under a zero-bias comes from the builtin surface field as well as a thermal gradient; 3) the trap species in the annealed LTMBE GaAs samples and the annealed control SI GaAs sample are similar, especially for TA(0.79eV), Ta (0.33eV), T4 (0.29eV), and T6*(0.16eV); and 4) the trap densities in LTMBE samples are higher than those in the control samples and are dependent on the MBE growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 57
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Chand, N., Sergent, A.M., Ziel, J.P. van der, and Lang, D.V., J.Vac.Sci Technol. B7, 399 (1989).10.1116/1.584760Google Scholar
2.Smith, F.W., Calawa, A.R., Chen, C-L., Manfra, M.J., and Mahoney, L.J., IEEE Electron Device Lett. 9, 77 (1988).Google Scholar
3.Kaminska, M., Weber, E.R., Lilental-Weber, Z., Leon, R., and Rek, Z.U., J.Vac.Sci. Technol. B7, 710 (1989).Google Scholar
4.Look, D.C., Walters, D.C., Manasreh, M.O., Sizelove, J.R., Stutz, C.E., and Evans, K.R.’ Phys.Rev. B42, 3578 (1990).Google Scholar
5.Warren, A.C., Woodall, J.M., Freeouf, J.L., Grischkowsky, D., Melloch, M.R., and Otsuka, N., Appl.Phys.Lett. 57, 1331 (1990).Google Scholar
6.Fang, Z-Q. and Look, D.C., J.Appl.Phys. 62, 8177 (1991).10.1063/1.347421Google Scholar
7.Fang, Z-Q. and Look, D.C., Appl.Phys.Lett. 59, 48 (1991).Google Scholar
8.Fang, Z-Q., Yamamoto, H., Look, D.C., Evans, K.R., and Stutz, C.E., in Semiinsulating III-V Materials, Toronto, 1990, edited by Milnes, A.G. and Miner, C.J. (Adams Hilger, Bristol, 1990), p. 117.Google Scholar
9.Huang, Z.G., Xie, K., and Wie, C.R., Rev.Sci.Instrum. 62, 1951 (1991).Google Scholar
10.Fang, Z-Q. and Look, D.C., to be published in the Proceedings of the 16th ICDS, Bethlehem, PA. 1991.Google Scholar
11.Halder, N.C. and Look, D.C., J.Appl.Phys. 66, 4858 (1989).Google Scholar