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Defect Induced Luminescence from MBE Prepared Si/Si1-xGex Superlattices†

Published online by Cambridge University Press:  25 February 2011

G.A. Northrop ,
S.S. Iyer  and
D.J. Wolford
G.A. Northrop
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
S.S. Iyer
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
D.J. Wolford
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598.
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Abstract

We report the first definitive observation of photoluminescence from Si/Si1-xGex superlattice heterostructures. Excitons bound to a deep-level radiation damage center (I1) are observed in a series of low Ge content (x = 0.05) unrelaxed structures. We also present preliminary results on photoluminescence from as-grown narrow period (Si6Ge4) superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 343
Copyright
Copyright © Materials Research Society 1990

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Footnotes

†

Supported in part by the U.S. Office of Naval Research under contract N00014-85-C-0868.

References

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