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Defect- Impurity Interaction in Irradiated n-GaAs

Published online by Cambridge University Press:  03 September 2012

F. P. Kdrshunov ,
T. A. Prokhorenkd ,
N. A. Sobolev  and
E. A. Mjdriavtseva
F. P. Kdrshunov
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ul. P. Brovki 17, Rep. of Belarus
T. A. Prokhorenkd
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ul. P. Brovki 17, Rep. of Belarus
N. A. Sobolev
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ul. P. Brovki 17, Rep. of Belarus
E. A. Mjdriavtseva
Affiliation:
Institute of Solid State and Semiconductor Physics, 220072 Minsk, ul. P. Brovki 17, Rep. of Belarus
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Abstract

The creation of radiation defects (RD's) and their interaction with shallow impurities in 3–4 MeV electron irradiated n-GaAs have been studied by means of photoluminescence (PL) and Hall effect. The irradiations were carried out at sample temperatures ranging from Ti = 30 to 500°C. It has been found for the first time that for high fluences at room temperature the shallow donor concentration starts to decrease. The behaviour of the carrier concentration (n), mobility (μ)and of the concentrations of the shallow acceptors C (As) and Ge (As) has been studied on irradiation and annealing. It was found that the behaviour of the As vacancy govern the main annealing processes observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 603
Copyright
Copyright © Materials Research Society 1992

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References

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