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Defect Engineering In Ion-Implanted Diamond

Published online by Cambridge University Press:  10 February 2011

A.A. Gippius ,
R.A. Khmelnitski ,
V.A. Dravin  and
S.D. Tkachenko
A.A. Gippius
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.lpi.ac.ru
R.A. Khmelnitski
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.lpi.ac.ru
V.A. Dravin
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.lpi.ac.ru
S.D. Tkachenko
Affiliation:
P.N.Lebedev Physical Institute of the Academy of Sciences of Russia, Leninsky prospect 53, Moscow 117924, Russia, gippius@sci.lpi.ac.ru
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Abstract

Optical interference studies of graphitized layers formed in diamond by ion implantation and annealing provided the data on the depth and the thickness of the layers as well as their optical parzmeters. The latter were found to be close to those of dispersed graphite. Cathodoluminescince analysis of implanted diamond samples gave evidence of vacancy migration over macroscopic distances (∼1001μ).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 431
Copyright
Copyright © Materials Research Society 1998

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