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Defect Engineering and Characterization in Oxide Surfaces using Electron Beam Irradiation

Published online by Cambridge University Press:  22 February 2011

D. L. Doering ,
K. H. Siek ,
P. Xiong-Skiba  and
D. L. Carroll
D. L. Doering
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459.
K. H. Siek
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459.
P. Xiong-Skiba
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459.
D. L. Carroll
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459.
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Abstract

Electron beam irradiation at energies between 0.5 and 4 keV has been found to produce defects in oxide materials including SiO2, Al2O3 and ZrO2. These defects trap excess charge in the materials and affect their electronic and optical properties. Measurements of the thermally stimulated exoelectron emission following irradiation provides information on relative defect concentrations, defect creation mechanisms, electron trap binding energies, electron emission mechanisms and annealing properties of these materials. Electron emission during sample heating occurs via a variety of mechanisms including the thermionic emission of excess charge from defects at temperatures characteristic of each trap binding energy. By measuring relative trap concentrations as a function of beam parameters, we have identified electron beam energy thresholds for the creation of some types of defects which correlate with core level electronic transitions. Also, electron emission which occurs during defect annealing or diffusion to a surface shows the conditions for the elimination of defects. The ability to control and characterize defect formation and annihilation provides the possibility of engineering specific surface defect conditions. In addition, defect creation by electronic processes is very selective as compared with momentum transfer in ion beam damage of surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 093
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1 Xiong-Skiba, P., Carroll, D. L., and Doering, D. L., J. Vac. Sci. Technol. A 8 (1990) 1549.Google Scholar
2 Carroll, D. L., Doering, D. L. and Blais, B. S., J. Vac. Sci. Technol. A10, 2863 (1992).Google Scholar
3 Carroll, D. L., Doering, D. L. and Xiong-Skiba, P., J. Vac. Sci. Technol A11, 2312 (1993).Google Scholar
4 Carroll, D. L., Xiong-Skiba, P. and Doering, D. L., Mat. Res. Soc. Symp. Proc. 279, (1993) in press.Google Scholar
5 Xiong-Skiba, P., Carroll, D. L., Doering, D. L. and Siek, K. H., Mat. Res. Soc. Symp. Proc. 284, (1993) in press.Google Scholar
6 Henrich, V. E., Rep. Prog. Phys. 48, 1481 (1985).Google Scholar
7 Baragiola, R. A., Madey, T. E. and LanzШotto, A-M., Phys. Rev. B41, 9541 (1990).Google Scholar
8 Feibelman, P. J. and Knotek, M. L., Phys. Rev. B18, 6531 (1978).Google Scholar
9 Siek, K. H., Doering, D. L. and Xiong-Skiba, P., unpublished.Google Scholar
10 Carroll, D. L., Doering, D. L. and Blais, B. S., Proc. Mat. Res. Soc. 235, 395 (1992).Google Scholar
11 Kortov, V. S. and Zatsepin, A. F., in Proceedings of the 9th Intern. Symp. on Exoelectron Emission and Appl. (Sujak, B., Scharmann, A., Gieroszynska, K. and Gieroszynski, A., Eds.) Wroclaw, Poland, (1988).Google Scholar
12 Sakurai, T., Momose, Y. and Takeuchi, M., Phys. Sol. Stat. A 135, 245 (1993).Google Scholar
13 Madey, T. E., in Inelastic Particle-Surface Collisions (Taglauer, E. and Heiland, W., Eds.) Springer Series in Chem. Phys. 17, 80 (1981).Google Scholar
14 Gupta, D. and Ho, P. S., Diffusion Phenomena in Thin Films and Microelectronic Materials. (Noyes Publ., 1988) pp. 223.Google Scholar