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Defect Elimination by MeV Ion Implantation

Published online by Cambridge University Press:  25 February 2011

S. Saito ,
M. Kumagai  and
T. Kondolt
S. Saito
Affiliation:
ULSI DEVICE DEVELOPEMENT LABORATORIES, NEC CORPORATION, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
M. Kumagai
Affiliation:
KANAGAWA HIGH TECHNOLOGY FOUNDATION, 100–1, Sakato, Takatsu-ku, Kanagawa 213, Japan
T. Kondolt
Affiliation:
KANAGAWA HIGH TECHNOLOGY FOUNDATION, 100–1, Sakato, Takatsu-ku, Kanagawa 213, Japan
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Abstract

In the p-type shallow junction formation using B+ implantation, preamorphaization is an essential technique to suppress B+ channeling. The crucial problem in this process is defect formation at an amorphous-crystal(a-c) interface. We have demonstrated that MeV ion implantation is effective to reduce defects for shallow junction formation. F+ preimplantation at 40 KeV with 1×l015 cm−2 was effective to form p-type shallow junctions by B+ implantation at 10 KeV with 5×1015cm−2. However, defect formation induced boron diffusion and also leakage current increase. These problems were overcome by MeV ion implantation at 1 MeV F+ or Si+ with 5x×1015 cm−2, followed by rapid thermal annealing at 1000–1100°C for 10 seconds. In the P preimplanted samples, followed by MeV ion implantation, defects at the a-c interface can be reduced and an about 50 % shallower junction depth was obtained, compared with just B+ implanted samples. The results indicate that MeV ion implantation is effective to form a shallow junction with a low leakage current.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 225
Copyright
Copyright © Materials Research Society 1993

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References

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