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Defect Distribution And Metastability in Chalcopyrite Semiconductors

Published online by Cambridge University Press:  10 February 2011

T. Walter ,
R. Herberholz ,
C. Müller  and
H. W. Schock
T. Walter
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik Pfaffenwaldring 47, D 70569 Stuttgart, Germany
R. Herberholz
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik Pfaffenwaldring 47, D 70569 Stuttgart, Germany
C. Müller
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik Pfaffenwaldring 47, D 70569 Stuttgart, Germany
H. W. Schock
Affiliation:
Universität Stuttgart, Institut für Physikalische Elektronik Pfaffenwaldring 47, D 70569 Stuttgart, Germany
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Abstract

Deep levels in chalcopyrite based heterojunctions are investigated by capacitance techniques. A method is presented which allows the determination of defect distributions from admittance measurements. For CuInSe2 a defect level at 280 meV above the valence band with an attempt to escape frequency of about 1011 s-1 is detected. A characteristic defect structure consisting of a shallow defect level and a broad deep structure is observed for Cu(In, Ga)Se2. The depth of the shallow defect is affected by annealing treatments which are necessary to achieve the optimum performance of the devices. CulnS2grown under an excess of CuS exhibits a high density of shallow defects whereas for Cu-poor CuInS2 defects close to midgap position with a large capture cross section are observed. These defects are metastable with respect to current injection and illumination relaxing to the equilibrium state around room temperature. The increase of the defect density after illumination results in a reduced bucking current. CV measurements can be interpreted in terms of a high density of deep states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 279
Copyright
Copyright © Materials Research Society 1996

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References

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