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Defect Creation and Electron Trapping in Single Crystal and Sintered Alumina by Electron Beam Irradiation

Published online by Cambridge University Press:  25 February 2011

D. L. Carroll ,
D. L. Doering  and
P. Xiong-Skiba
D. L. Carroll
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459–0155
D. L. Doering
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459–0155
P. Xiong-Skiba
Affiliation:
Department of Physics, Wesleyan University, Middletown, CT 06459–0155
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Abstract

Electron beam irradiation of oxides produces electron trapping states which store excess charge. Thermionic emission of this charge occurs during heating with emission peak temperatures related to binding mechanisms and energies. We present thermionic emission results which show both intrinsic and beam induced trapping states in OC-Al2O3 (sapphire) and sintered alumina. Five states have been identified with thermionic emission peaks at temperatures between -50°C and 500°C. Two states are electron beam induced and occur only for electron beam energies above fixed thresholds. These thresholds appear to correlate to with the Is core electron binding energies for oxygen and aluminum. The emission peaks from the sintered material are about 10 fold greater in intensity and slightly broadened in comparison to the single crystal. This suggests that structure plays an important role in charge trapping. Emission was also extremely sensitive to sample treatments such as annealing before electron irradiation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 445
Copyright
Copyright © Materials Research Society 1993

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