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Defect Annihilation in Czochralski-Grown Silicon During Out-Diffusion Process Probed with Variable-Energy Positron Beam

  • T. Kitano (a1), L. Wei (a2), Y. Tabuki (a2), S. Tanigawa (a2) and H. Mikoshiba (a1)...

Abstract

The defect annihilation in CZ-crystal was first detected during the process of oxygen out-diffusion, by the positron measurements with a variable-energy beam. The defects, which were related to oxygen atoms such as oxygen cluster, were mainly annihilated at the high temperature, ex., 1150°C. The defect concentration was decreasing down to one tenth, compared with that for an as-grown crystal.

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Defect Annihilation in Czochralski-Grown Silicon During Out-Diffusion Process Probed with Variable-Energy Positron Beam

  • T. Kitano (a1), L. Wei (a2), Y. Tabuki (a2), S. Tanigawa (a2) and H. Mikoshiba (a1)...

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