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Defect Annihilation in Czochralski-Grown Silicon During Out-Diffusion Process Probed with Variable-Energy Positron Beam

Published online by Cambridge University Press:  03 September 2012

T. Kitano ,
L. Wei ,
Y. Tabuki ,
S. Tanigawa  and
H. Mikoshiba
T. Kitano
Affiliation:
VLSI Development Division, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan
L. Wei
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305, Japan
Y. Tabuki
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305, Japan
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki, 305, Japan
H. Mikoshiba
Affiliation:
VLSI Development Division, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa, 229, Japan
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Abstract

The defect annihilation in CZ-crystal was first detected during the process of oxygen out-diffusion, by the positron measurements with a variable-energy beam. The defects, which were related to oxygen atoms such as oxygen cluster, were mainly annihilated at the high temperature, ex., 1150°C. The defect concentration was decreasing down to one tenth, compared with that for an as-grown crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 707
Copyright
Copyright © Materials Research Society 1992

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References

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