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Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

Published online by Cambridge University Press:  17 March 2011

H. Amano ,
M. Iwaya ,
S. Nitta ,
S. Terao ,
R. Nakamura ,
T. Ukai ,
S. Saitoh ,
S. Kamiyama ,
C. Wetzel  and
I. Akasaki
H. Amano
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
M. Iwaya
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Nitta
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Terao
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
R. Nakamura
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
T. Ukai
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Saitoh
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
S. Kamiyama
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
C. Wetzel
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
I. Akasaki
Affiliation:
High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
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Abstract

Defects and stress are the most serious issues for growth of AlGaN. Low-temperature deposited (LT -) AlN interlayer between AlGaN and GaN is found to reduce tensile stress during growth, and at the same time suppress the propagation of dislocations having screw components, by which UV-photodetector showing very-low-dark current has been successfully fabricated. However, additional pure-edge dislocations are generated at the LT -interlayer, which resulted in the poor emission property. In addition to the LT -interlayer, lateral growth at the trenched structure was used, thereby achieving crack-free AlGaN and reduction of the density of all types of dislocations in the AlGaN layer. UV light emitting diodes having AlGaN/GaN multi-quantum well active layer was fabricated on the low dislocation density AlGaN. The LED shows strong and sharp UV-emission from GaN-wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G12.7
Copyright
Copyright © Materials Research Society 2001

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References

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