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Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

  • H. Amano (a1), M. Iwaya (a1), S. Nitta (a1), S. Terao (a1), R. Nakamura (a1), T. Ukai (a1), S. Saitoh (a1), S. Kamiyama (a1), C. Wetzel (a1) and I. Akasaki (a1)...

Abstract

Defects and stress are the most serious issues for growth of AlGaN. Low-temperature deposited (LT -) AlN interlayer between AlGaN and GaN is found to reduce tensile stress during growth, and at the same time suppress the propagation of dislocations having screw components, by which UV-photodetector showing very-low-dark current has been successfully fabricated. However, additional pure-edge dislocations are generated at the LT -interlayer, which resulted in the poor emission property. In addition to the LT -interlayer, lateral growth at the trenched structure was used, thereby achieving crack-free AlGaN and reduction of the density of all types of dislocations in the AlGaN layer. UV light emitting diodes having AlGaN/GaN multi-quantum well active layer was fabricated on the low dislocation density AlGaN. The LED shows strong and sharp UV-emission from GaN-wells.

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Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

  • H. Amano (a1), M. Iwaya (a1), S. Nitta (a1), S. Terao (a1), R. Nakamura (a1), T. Ukai (a1), S. Saitoh (a1), S. Kamiyama (a1), C. Wetzel (a1) and I. Akasaki (a1)...

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