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Defect and Raman Spectroscopy of Chemical Vapor Deposition Grown Diamond Films

Published online by Cambridge University Press:  10 February 2011

J.M. Perez ,
R.E. Stallcup II  and
I.A. Akwani
J.M. Perez
Affiliation:
University of North Texas, Department of Physics, Denton, TX 76203
R.E. Stallcup II
Affiliation:
University of North Texas, Department of Physics, Denton, TX 76203
I.A. Akwani
Affiliation:
University of North Texas, Department of Physics, Denton, TX 76203
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Abstract

Using photoelectron emission and Raman spectroscopy, we characterize normally unoccupied states that have an energy 2.41-2.71 eV below the conduction band of polycrystalline diamond films. The films are grown using chemical vapor deposition with methane to hydrogen gas concentrations of 0.10%, 0.20%, 0.30%, 0.45%, 0.60% and 0.70%. Photoelectron emission is performed using visible light from an argon laser. The light is focussed on a 5-10 µm diameter area of the sample. The emitted electrons are collected with high efficiency using a microchannel plate detector. Raman spectroscopy is performed simultaneously with photoelectron emission to determine the morphology and diamond versus graphite content of the photoelectron emission area. The photoelectron emission rate is observed to have a quadratic dependence on the incident light power showing that the photoelectron emission process is a two-photon process involving the excitation of electrons from normally unoccupied states. The photoelectric yield versus incident photon energy, and the photoelectric yield as a function of methane concentration are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 589
Copyright
Copyright © Materials Research Society 2000

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References

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