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Defect and Island Formation in Stranski-Krastanov Growth of Ge on Si (001)

Published online by Cambridge University Press:  15 February 2011

Akira Sakai  and
Toru Tatsumi
Akira Sakai
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
Toru Tatsumi
Affiliation:
Microelectronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan
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Abstract

We have examined macroscopic island (Macro-island) formation in Stranski-Krastanov (SK) growth of Ge on Si (001) surfaces at various growth temperatures in molecular beam epitaxy (MBE). The nucleation mode of Macro-island formation was observed to be predominantly heterogeneous at medium growth temperatures less than 450°C, but homogeneous at high temperatures. In the heterogeneous Mode, Macro-island formation is mediated by particular V-shaped defects running preferentially along the <110> direction, which form as a result of coalescence of the well-faceted islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 343
Copyright
Copyright © Materials Research Society 1994

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References

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