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Defect Analyses in VLSI Devices by TEM Observation and Process Simulation

  • H. Mikoshiba (a1), N. Nishio (a1), T. Matsumoto (a1), H. Kikuchi (a1), T. Kitano (a1) and H. Kaneko (a1)...

Abstract

This paper presents several examples of defect analyses carried out in actual VLSI failure analyses and experiments, using TEM technique, process simulation and other advanced analytical tools. New TEM techniques are also described to observe a precise location which has failed.

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