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Deep-Level Dominated Electrical Characteristics of Au Contacts on β-SiC

Published online by Cambridge University Press:  26 February 2011

K. Das ,
H. S. Kong ,
J. B. Petit ,
J. W. Bumgarner ,
L. G. Matus  and
R. F. Davis
K. Das
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
H. S. Kong
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
J. B. Petit
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
J. W. Bumgarner
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
L. G. Matus
Affiliation:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907
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Abstract

Current-voltage characteristics of Au contacts formed on β-SiC films grown heteroepitaxially on both nominally (100) oriented and off-axis (100) silicon substrates have been investigated. Logarithmic plots of the I-V characteristics in the forward direction indicate space charge limited current conduction through the active volume of the diodes. The β-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located approximately between 0.26 eV and 0.38 eV below the conduction band edge. In some films on nominal (100) substrates, the I-V characteristics are also influenced by additional traps which are exponentially distributed in energy with a maximum occurring at the conduction band edge. In contrast, the films deposited on off-axis substrates have only one deep level located at approximately 0.49 eV for the 2° off (100) substrates and 0.57 eV for the 4° off (100) substrates. Previous microstructural analysis revealed that the nature and density of defects in the β-SiC heteroepitaxial films on both nominal and off-axis (100) silicon are similar except that the films on nominal (100) substrates have a high density of antiphase domain boundaries. Therefore, the presence of the shallower deep-level states observed in the β-SiC films grown on nominal (100) substrates is speculated to be due to the electrical activity of antiphase domain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 489
Copyright
Copyright © Materials Research Society 1990

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References

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