Skip to main content Accessibility help

Deep-Level Dominated Electrical Characteristics of Au Contacts on β-SiC

  • K. Das (a1), H. S. Kong (a1), J. B. Petit (a1), J. W. Bumgarner (a1), L. G. Matus (a2) and R. F. Davis (a1)...


Current-voltage characteristics of Au contacts formed on β-SiC films grown heteroepitaxially on both nominally (100) oriented and off-axis (100) silicon substrates have been investigated. Logarithmic plots of the I-V characteristics in the forward direction indicate space charge limited current conduction through the active volume of the diodes. The β-SiC films grown on nominally (100) oriented substrates show the presence of two deep levels located approximately between 0.26 eV and 0.38 eV below the conduction band edge. In some films on nominal (100) substrates, the I-V characteristics are also influenced by additional traps which are exponentially distributed in energy with a maximum occurring at the conduction band edge. In contrast, the films deposited on off-axis substrates have only one deep level located at approximately 0.49 eV for the 2° off (100) substrates and 0.57 eV for the 4° off (100) substrates. Previous microstructural analysis revealed that the nature and density of defects in the β-SiC heteroepitaxial films on both nominal and off-axis (100) silicon are similar except that the films on nominal (100) substrates have a high density of antiphase domain boundaries. Therefore, the presence of the shallower deep-level states observed in the β-SiC films grown on nominal (100) substrates is speculated to be due to the electrical activity of antiphase domain boundaries.



Hide All
1. Palmour, J.W., Kong, H.S., and Davis, R.F., Appl. Phys. Lett. 15, 2028 (1987).
2. Baliga, B.J., IEEE Electron Device Lett. EDL–1, 200 (1989).
3. Ioannou, D.E., Papanicolaou, N.A. and Nordquist, P.E. Jr, IEEE Trans. Electron Devices, ED–34, 1694 (1987).
4. Ozarrow, V. and Hysell, R.E., J. Appl. Phys. 33, 3013 (1962).
5. Edmond, J.A., Das, K. and Davis, R.F., J. Appl. Phys. 63, 922 (1988).
6. Lampert, M.A. and Mark, P., “Current Injection in Solids”, (Academic, New York, 1970).
7. Lanyon, H.P.D., Phys. Rev. 130, 134 (1963).
8. Liaw, P. and Davis, R.F., J. Electrochem. Soc. 132, 642 (1985).
9. Kong, H.S., Wang, Y.C., Glass, J.T. and Davis, R.F., J. Mat. Res. 3, 521 (1988).
10. Powell, J. A., Matus, L.G. and Kuczmarski, M.A., J. Electrochem Soc., 134, 1558 (1987).
11. Sze, S. M., “Physics of Semiconductor Devices”, 2nd ed. (Wiley, New York, 1981).
12. Edmond, J. A., Ryu, J., Glass, J. T., and Davis, R. F., J. Electrochem. Soc., 135, 359 (1988).
13. Sah, C-T, IRE Trans. Electron Devices, ED–9, 94 (1962).
14. Palmour, J. W., Kong, H. S., and Davis, R. F., J. Appl. Phys. 64, 2168 (1988).
15. Powell, J.A., Matus, L.G., Kuczmarski, M.A., Chorey, C.M., Cheng, T.T. and Pirouz, P., Appl. Phys. Lett. 51, 823 (1987).
16. Li, Y. and Lin-Chung, P. J., Phys. Rev. B, 36, 1130 (1987).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed