Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T23:28:11.694Z Has data issue: false hasContentIssue false
  • English
  • Français

Deep Photoluminescence Bands in Mbe Grown Si and Sige.

Published online by Cambridge University Press:  15 February 2011

I.A. Buyanova ,
A. Henry ,
W.M Chen ,
W.X. Ni ,
G.V. Hansson  and
B. Monemar
I.A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
A. Henry
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
W.M Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
W.X. Ni
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
G.V. Hansson
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden.
Get access

Abstract

Broad photoluminescence (PL) bands with energy position ranging from 0.70 to 1.03 eV, are shown to appear in Si epilayers and Sil−xGex/Si heterostructures grown by molecular beam epitaxy under non-optimized conditions. The presence of a particular broad band (BB) is found to be determined by the growth conditions, in particular by the bias applied to the substrate during the growth. Ion bombardment during the growth is shown to be a main factor enhancing the formation of BB-related defects. To clarify their origin, the effects of post-growth hydrogen treatments and of an external magnetic field are investigated. The BBs are shown to be related to various types of radiative centres, either point or extended defects. A correlation between X-ray diffraction and PL measurements is also observed. The spatial location of the BB-related defects is inferred by results from optically detected cyclotron resonance (ODCR) and PL excitation studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 405
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Nodl, J.-P, Greene, J.E., Rowell, N.L. and Houghton, D.C., Appl. Phys. Lett. 56, 265 (1990).Google Scholar
2. Arbet-Engels, V., Tijero, J.M.G., Manissadian, A., Wang, K.L., and Higgs, V., Appl. Phys. Lett. 61, 2586 (1992)Google Scholar
3. Rowell, N.L., Nodl, J.-P Houghton, D.C., Wang, A., Lenchyshyn, L.C., Thewalt, M.L.W. and Perovic, D.D., J. Appl. Phys. 74, 2790 (1993)Google Scholar
4. Ni, W.X., Henry, A., Larson, M.I., Joelsson, K. and Hansson, G.V., Appl. Phys. Lett. 65, 1772 (1994)Google Scholar
5. Arbet-Engels, V., Kallel, M.A. and Wang, K.L., Appl. Phys. Lett. 59, 1705 (1991)Google Scholar
6. Glasser, E.R., Kennedy, T.A., Godbey, D.J., Thompson, P.E., Wang, K.L. and Chem, C.H., Phys. Rev B 47, 1305 (1993).Google Scholar
7. Hartmann, A., Vescan, L., Dieker, C., Stoica, T. and Lfith, H., Phys. Rev. B48, 18 276 (1993)Google Scholar
8. Tijero, J.M.G., Arbet-Engels, V., Manissadjian, A., Wang, K.L. and Higgs, V., J. Appl. Phys. 74, 1279 (1993)Google Scholar
9. Sturm, J.C., Amour, A. St., Lacroix, Y. and Thewalt, M.L.W., Appl. Phys. Lett. 64, 2291 (1994)Google Scholar
10. Buyanova, I.A., Chen, W.M., Henry, A., Ni, W.X., G.V. Hansson and Monemar, B., unpublished.Google Scholar
11. Chen, W.M., Buyanova, I.A., Henry, A., Ni, W.X., G.V. Hansson and Monemar, B., this proceedings.Google Scholar