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Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes

Published online by Cambridge University Press:  10 February 2011

A Castaldini ,
A Cavallini ,
L Polenta ,
C Canali ,
F Nava ,
R Ferrini  and
M Galli
A Castaldini
Affiliation:
INFM, Viale Berti Pichat 6/2, Bologna, Italy Dipartimento di Fisica, Viale Berti Pichat 6/2, Bologna, Italy
A Cavallini
Affiliation:
INFM, Viale Berti Pichat 6/2, Bologna, Italy Dipartimento di Fisica, Viale Berti Pichat 6/2, Bologna, Italy
L Polenta
Affiliation:
INFM, Viale Berti Pichat 6/2, Bologna, Italy Dipartimento di Fisica, Viale Berti Pichat 6/2, Bologna, Italy
C Canali
Affiliation:
INFM, Viale Berti Pichat 6/2, Bologna, Italy Dipartimento di Elettronica, Via Vivaldi 70, Modena, Italy
F Nava
Affiliation:
Dipartimento di Fisica, Via Campi 213B, Modena, Italy
R Ferrini
Affiliation:
INFM, Viale Berti Pichat 6/2, Bologna, Italy Dipartimento di Fisica, Via Bassi 6, Pavia, Italy
M Galli
Affiliation:
INFM, Viale Berti Pichat 6/2, Bologna, Italy Dipartimento di Fisica, Via Bassi 6, Pavia, Italy
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Abstract

Semi-insulating liquid encapsulated Czochralski grown GaAs has been investigated after irradiation at high fluences of high-energy protons. Electron beam induced current observations of scanning electron microscopy evidenced a radiation stimulated ordering. An analysis has been carried out of the deep levels associated with defects as a function of the irradiation fluence, using complementary current transient spectroscopies. By increasing the irradiation fluence, the concentration of the native traps at 0.37 eV together with that of the EL2 defect significantly increases and, at the same time, two new electron traps at 0.15 eV and 0.18 eV arise and quickly increase in density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 447
Copyright
Copyright © Materials Research Society 1998

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