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Deep Levels in Type-II Superlattices

Published online by Cambridge University Press:  22 February 2011

John D. Dow ,
Jun Shen ,
Shang Yuan Ren  and
William E. Packard
John D. Dow
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287–1504, U.S.A.
Jun Shen
Affiliation:
Motorola, Inc., Phoenix Corporate Research Laboratories, Tempe, Arizona 85284, U.S.A.
Shang Yuan Ren
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287–1504, U.S.A.
William E. Packard
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287–1504, U.S.A.
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Abstract

Quantum confinement in superlattices affects shallow levels and band edges considerably (length scale of order 100 Å), but not deep levels (length scale of order 5 Å). Thus by band-gap engineering, one can move a band edge through a deep level, causing the defect responsible for the level to change its doping character. For example, the cation-on-anion-site defect in AlxGa1−xSb alloys is predicted to change from a shallow acceptor to a deep acceptor-like trap as the valence band edge passes through its T2 deep level with increasing At alloy content x. In a, Type-II superlattice, such as InAs/AlxGa1−xSb for x>0.2, where the conduction band minimum of the InAs should lie energetically below the antisite defect's T2 level in bulk AlxGa1−xSb, the electrons normally trapped in this deep level (when the defect is neutral) remotely dope the InAs n-type in the superlattice, leaving the defect positively charged. Thus a native defect that is thought of as an acceptor can actually be a donor and control the n-type doping of InAs quantum wells. The physics of such deep levels in superlattices and in quantum wells is summarized, and related to high-speed devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 3
Copyright
Copyright © Materials Research Society 1994

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