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Deep Levels in Type-II Superlattices

  • John D. Dow (a1), Jun Shen (a2), Shang Yuan Ren (a1) and William E. Packard (a1)


Quantum confinement in superlattices affects shallow levels and band edges considerably (length scale of order 100 Å), but not deep levels (length scale of order 5 Å). Thus by band-gap engineering, one can move a band edge through a deep level, causing the defect responsible for the level to change its doping character. For example, the cation-on-anion-site defect in AlxGa1−xSb alloys is predicted to change from a shallow acceptor to a deep acceptor-like trap as the valence band edge passes through its T2 deep level with increasing At alloy content x. In a, Type-II superlattice, such as InAs/AlxGa1−xSb for x>0.2, where the conduction band minimum of the InAs should lie energetically below the antisite defect's T2 level in bulk AlxGa1−xSb, the electrons normally trapped in this deep level (when the defect is neutral) remotely dope the InAs n-type in the superlattice, leaving the defect positively charged. Thus a native defect that is thought of as an acceptor can actually be a donor and control the n-type doping of InAs quantum wells. The physics of such deep levels in superlattices and in quantum wells is summarized, and related to high-speed devices.



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[23] A word of caution is in order about the results of Figs. 9 and 10. We have interpreted the theoretical results as though there were zero theoretical uncertainty. In fact modest uncertainties in the theory could lead to somewhat different level positions and hence different predictions. Nevertheless our goal is to illustrate the qualitative features of the theory.

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Deep Levels in Type-II Superlattices

  • John D. Dow (a1), Jun Shen (a2), Shang Yuan Ren (a1) and William E. Packard (a1)


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