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Deep Levels Associated with Oxygen Precipitation in CZ Silicon and Correlation with Minority Carrier Lifetimes

Published online by Cambridge University Press:  28 February 2011

S. S. Chan ,
C. J. Varker ,
J. D. Whitfield  and
R. W. Carpenter
S. S. Chan
Affiliation:
Motorola Semiconductor Research and Development Laboratories, Phoenix, AZ 85008
C. J. Varker
Affiliation:
Motorola Semiconductor Research and Development Laboratories, Phoenix, AZ 85008
J. D. Whitfield
Affiliation:
Motorola Semiconductor Research and Development Laboratories, Phoenix, AZ 85008
R. W. Carpenter
Affiliation:
Arizona State University, Center of Solid State Science, Tempe, AZ 85287
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Abstract

A dominant electron trap in boron-doped CZ silicon at Ec −0.41 ± 0.02 eV with a electron capture cross section >10−14 cm2 has been observed with DLTS in 2-step annealed (16 hrs at 800°C + 16 hrs at 1050°C) seed end wafers where oxygen precipitation is pronounced. A strong correlation between the generation lifetime τg (as calculated from junction reverse generation currents) and the density of this trap is also observed. Electron microscopy showed the dominant precipitates to be {100} plate type containing only Si and 0, with dislocations and punched-out loops in close proximity. Wafers from the center- or tang-sections of the ingot or those given a 1-step anneal (conditions which result in much less oxygen precipitation) contain a low density (<1.2 × 1012 cm−3) of a hole trap at Ev +0.25 eV not correlated with Tg. These wafers contain precipitates with a different morphology with much rower or minimal dislocation densities. Possible origins of the lifetime controlling electron trap is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 281
Copyright
Copyright © Materials Research Society 1985

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